MGF0909A1 Datasheet Pdf IC-ON-LINE.CN-Free DataSheet Search and Download Site





전자 부품 DataSheet 수색과 다운로드는 위치를 차지한다 .


	부품 번호	참고 가격
	제품 설명	가득 차있는 원본 수색


IC-ON-LINE 홈 페이지	분류 목록	제조자 명부
표준 패킹	연결 교환	조회연결(API)

서버 A	서버 B	서버 C

Datasheet 수색

가득 차있는 원본 수색

참고 가격

Results filter
Start with:
End:	74112 *674112
Included:	74112 674112B

MGF0909A1

MGF0909A1 DataSheet MITSUBISHI[Mitsubishi Electric Semiconductor] L,S BAND POWER GaAs FET

BAND POWER GaAs

MITSUBISHI[Mitsubishi Electric Semiconductor]

34.887 Kb

3 Pages

MGF0909A1.File Click here to View
MGF0909A1.File Right Click here to Save

Datasheet Download Server A

Datasheet Download Server B

Datasheet Download Server C

Datasheet Download Server D

MGF0909A1.File Click here To Preview

---Full Text Search Engine--- MGF0909A1 MITSUBISHI[Mitsubishi Electric Semiconductor]
---Full Text Search Engine--- BAND POWER GaAs

MGF0909A_1 MGF0909A

MGF0909A	[Mitsubishi Electric Semiconductor] L,S BAND POWER GaAs FET
MGF0909A	[Mitsubishi] L, S BAND POWER GaAs FET
MGF0909	[Mitsubishi] L /S BAND POWER GaAs FET
MGF0909A	[MITSUBISHI[Mitsubishi Electric Semiconductor]] L,S BAND POWER GaAs FET
MGF0909A_1	[MITSUBISHI[Mitsubishi Electric Semiconductor]] L,S BAND POWER GaAs FET
MGF0909	[MITSUBISHI[Mitsubishi Electric Semiconductor]] L,S BAND POWER GaAs FET
MGF0909A	[MITSUBISHI[Mitsubishi Electric Semiconductor]] L,S BAND POWER GaAs FET

MITSUBISHI SEMICONDUCTOR<GaAs FET>
MGF0909A
L & S BAND GaAs FET [ non - matched ]
DESCRIPTION
The MGF0909A GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers.
OUTLINE DRAWING
Unit : millimeters
FEATURES
* High output power P1dB=38.0dBm(TYP.) @f=2.3GHz * High power gain GLp=11.0dB(TYP.) add=45%(TYP.) * Hermetic Package @f=2.3GHz @f=2.3GHz,P1dB * High power added efficiency
A
O2.2
0.6*}0.2 B
A
APPLICATION
* For L/S Band power amplifiers
QUALITY
* GG * Vds=10V * Ids=1.3A * Rg=100
1.650.1
RECOMMENDED BIAS CONDITIONS
5.0
9.0*}0.2
Absolute maximum ratings
Symbol
VGSO VGDO ID IGR IGF PT Tch Tstg
(Ta=25C)
14.0
0.65
Parameter
Gate to sourcebreakdown voltage Gate to drain breakdown voltage Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature
Ratings
-15 -15 5 -15 31.5 27.3 175 -65 to +175
Unit
V V A mA mA W C C
GF-7
(1) GATE (2) SOURCE (FLANGE) (3) DRAIN
Electrical characteristics
Symbol
IDSS VGS(off) gm P1dB add GLP Rth(ch-c)
(Ta=25C)
Parameter
Saturated drain current Gate to source cut-off voltage Transconductance Output power 1dB Compression P Power added Efficiency Linear Power Gain Thermal Resistance *1
Test conditions
Min. VDS=3V,VGS=0V VDS=3V,ID=10mA VDS=3V,ID=1.3A VDS=10V,ID=1.3A,f=2.3GHz -2.0 37.0 10.0 -
Limits
Typ. -1.5 38.0 45 11.0 Max. 5.0 -5.0 9
Unit
A V S dBm % dB C/W
*1 *1:Po=P1dB *2
*2:Pi=22dBm Vf Method
*1:Channel to case /
Above parameters, ratings, limits are subject to change.
Mitsubishi Electric
June/2004
2MIN 4.4+0/-0.3 2MIN
@
1.9*}0.4
MGF0909A TYPICAL CHARACTERISTICS Tc=0/25/50/75deg.C
TC=0deg TC=50deg 45 TC=25deg TC=75deg 90
40
80
35 Po Pout(dBm) 30
70
60
PAE 20 40
GLP(dB)
15 GP 10
30
20
5
10
0 0 10 20 Pin (dBm) 30 40
0
Mitsubishi Electric
PAE (%)
June/2004
25
50
MITSUBISHI SEMICONDUCTOR<GaAs FET>
MGF0909A
L & S BAND GaAs FET [ non - matched ]
Requests Regarding Safety Designs Mitsubishi Electric constantly strives to raise the level of its quality and reliability. Despite these concerted efforts, however, there will be occasions when our semiconductor products suffer breakdowns, malfunctions or other problems. In view of this reality, it is requested that every feasible precaution be taken in the pursuit of redundancy design, malfunction prevention design and other safety-related designs, to prevent breakdowns or malfunctions in our products from resulting in accidents involving people, fires, social losses or other problems, thereby upholding the highest levels of safety in the products when in use by customers. Matters of Importance when Using these Materials 1. These materials are designed as reference materials to ensure that all customers purchase Mitsubishi Electric semiconductors best suited to their specific use applications. Please be aware, however, that the technical information contained in these materials does not comprise consent for the execution or use of intellectual property rights or other rights owned by Mitsubishi Electric Corporation. 2. Mitsubishi Electric does not assume responsibility for damages resulting from the use of product data, graphs, charts, programs, algorithms or other applied circuit examples described in these materials, or for the infringement of the rights of third-party owners resulting from such use. 3. The data, graphs, charts, programs, algorithms and all other information described in these materials were current at the issue of these materials, with Mitsubishi Electric reserving the right to make any necessary updates or changes in the products or specifications in these materials without prior notice. Before purchasing Mitsubishi Electric semiconductor products, therefore, please obtain the latest available information from Mitsubishi Electric directly or an authorized dealer. 4. Every possible effort has been made to ensure that the information described in these materials is fully accurate. However, Mitsubishi Electric assumes no responsibility for damages resulting from inaccuracies occurring within these materials. 5. When using the product data, technical contents indicated on the graphs, charts, programs or algorithms described in these materials, assessments should not be limited to only the technical contents, programs and algorithm units. Rather, it is requested that ample evaluations be made of each individual system as a whole, with the customer assuming full responsibility for decisions on the propriety of application. Mitsubishi Electric does not accept responsibility for the propriety of application. 6. The products described in these materials, with the exception of special mention concerning use and reliability, have been designed and manufactured with the purpose of use in general electronic machinery. Accordingly these products have not been designed and manufactured with the purpose of application in machinery or systems that will be used under conditions that can affect human life, or in machinery or systems used in social infrastructure that demand a particularly high degree of reliability. When considering the use of the products described in these materials in transportation machinery (automobiles, trains, vessels), for objectives related to medical treatment, aerospace, nuclear power control, submarine repeaters or systems or other specialized applications, please consult with Mitsubishi Electric directly or an authorized dealer. 7. When considering use of products for purposes other than the specific applications described in these materials, please inquire at Mitsubishi Electric o r an authorized dealer. 8. The prior consent of Mitsubishi Electric in writing is required for any reprinting or reproduction of these materials. 9. Please direct any inquiries regarding further details of these materials, or any other comments or matters of attention, to Mitsubishi Electric or an authorized dealer.
Mitsubishi Electric
June/2004