MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0909A L & S BAND GaAs FET [ non - matched ] DESCRIPTION The MGF0909A GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. OUTLINE DRAWING Unit : millimeters FEATURES * High output power P1dB=38.0dBm(TYP.) @f=2.3GHz * High power gain GLp=11.0dB(TYP.) add=45%(TYP.) * Hermetic Package @f=2.3GHz @f=2.3GHz,P1dB * High power added efficiency A O2.2 0.6*}0.2 B A APPLICATION * For L/S Band power amplifiers QUALITY * GG * Vds=10V * Ids=1.3A * Rg=100 1.650.1 RECOMMENDED BIAS CONDITIONS 5.0 9.0*}0.2 Absolute maximum ratings Symbol VGSO VGDO ID IGR IGF PT Tch Tstg (Ta=25C) 14.0 0.65 Parameter Gate to sourcebreakdown voltage Gate to drain breakdown voltage Drain current Reverse gate current Forward gate current Total power dissipation Cannel temperature Storage temperature Ratings -15 -15 5 -15 31.5 27.3 175 -65 to +175 Unit V V A mA mA W C C GF-7 (1) GATE (2) SOURCE (FLANGE) (3) DRAIN Electrical characteristics Symbol IDSS VGS(off) gm P1dB add GLP Rth(ch-c) (Ta=25C) Parameter Saturated drain current Gate to source cut-off voltage Transconductance Output power 1dB Compression P Power added Efficiency Linear Power Gain Thermal Resistance *1 Test conditions Min. VDS=3V,VGS=0V VDS=3V,ID=10mA VDS=3V,ID=1.3A VDS=10V,ID=1.3A,f=2.3GHz -2.0 37.0 10.0 - Limits Typ. -1.5 38.0 45 11.0 Max. 5.0 -5.0 9 Unit A V S dBm % dB C/W *1 *1:Po=P1dB *2 *2:Pi=22dBm Vf Method *1:Channel to case / Above parameters, ratings, limits are subject to change. Mitsubishi Electric June/2004 2MIN 4.4+0/-0.3 2MIN @ 1.9*}0.4 MGF0909A TYPICAL CHARACTERISTICS Tc=0/25/50/75deg.C TC=0deg TC=50deg 45 TC=25deg TC=75deg 90 40 80 35 Po Pout(dBm) 30 70 60 PAE 20 40 GLP(dB) 15 GP 10 30 20 5 10 0 0 10 20 Pin (dBm) 30 40 0 Mitsubishi Electric PAE (%) June/2004 25 50 MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0909A L & S BAND GaAs FET [ non - matched ] Requests Regarding Safety Designs Mitsubishi Electric constantly strives to raise the level of its quality and reliability. Despite these concerted efforts, however, there will be occasions when our semiconductor products suffer breakdowns, malfunctions or other problems. In view of this reality, it is requested that every feasible precaution be taken in the pursuit of redundancy design, malfunction prevention design and other safety-related designs, to prevent breakdowns or malfunctions in our products from resulting in accidents involving people, fires, social losses or other problems, thereby upholding the highest levels of safety in the products when in use by customers. Matters of Importance when Using these Materials 1. These materials are designed as reference materials to ensure that all customers purchase Mitsubishi Electric semiconductors best suited to their specific use applications. Please be aware, however, that the technical information contained in these materials does not comprise consent for the execution or use of intellectual property rights or other rights owned by Mitsubishi Electric Corporation. 2. 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